Floating bonds and gap states in a-Si and a-Si:H from first principles calculations

We study in detail by means of ab-initio pseudopotential calculations the electronic structure of five-fold coordinated (T_5) defects in a-Si and a-Si:H, also during their formation and their evolution upon hydrogenation. The atom-projected densities of states (DOS) and an accurate analysis of the valence charge distribution clearly indicate the fundamental contribution of T_5 defects in originating gap states through their nearest neighbors. The interaction with hydrogen can reduce the DOS in the gap annihilating T_5 defects.Comment: To appear in Europhysics Let

On-surface and Subsurface Adsorption of Oxygen on Stepped Ag(210) and Ag(410) Surfaces

The adsorption of atomic oxygen and its inclusion into subsurface sites on Ag(210) and Ag(410) surfaces have been investigated using density functional theory. We find that--in the absence of adatoms on the first metal layer--subsurface adsorption results in strong lattice distortion which makes it energetically unfavoured. However subsurface sites are significantly stabilised when a sufficient amount of O adatoms is present on the surface. At high enough O coverage on the Ag(210) surface the mixed on-surface + subsurface O adsorption is energetically favoured with respect to the on-surface only adsorption. Instead, on the Ag(410) surface, at the coverage we have considered (3/8 ML), the existence of stable terrace sites makes the subsurface O incorporation less favourable. These findings are compatible with the results of recent HREEL experiments which have actually motivated this work.Comment: 8 pages, 4 figures and 1 tabl

Ab initio study of phonons in wurtzite AlxGa1-xN alloys

We present a theoretical study of the zone-center optical phonons in wurtzite AlxGa1-xN alloys over the whole compositional range from pure GaN to pure AlN. The phonon modes are broadened upon alloying and their frequencies display a blue shift with increasing Al concentration. The E-2 and E-1(TO) modes display a two-mode like behavior and do not preserve a well-defined symmetry in the alloy but rather are mixed and have a large broadening. The LO modes, instead, display a one-mode behavior and have a well-defined symmetry, small broadening, and a pronounced dependence of the frequency upon alloy composition. Therefore, we propose them as the best candidates for the compositional characterization of these materials. (C) 2000 American Institute of Physics. [S0003-6951(00)04815-4]

Coordination defects in a-Si and a-Si:H : a characterization from first principles calculations

We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of the ``electron localization function'' (ELF) allows to resolve possible ambiguities in the bonding configuration, and in particular to identify clearly three-fold (T_3) and five-fold (T_5) coordinated defects. We found that electronic states in the gap can be associated to both kind of defects, and that in both cases the interaction with hydrogen can reduce the density of states in the gap.Comment: To appear in Philos. Ma

Effects of disorder on the optical gap of (Zn,Mg)(S,Se)

The electronic properties and optical gap of (Zn,Mg)(S,Se) wide-gap solid solutions are studied using ab initio techniques and starting from the previously determined atomistic structure of the alloy. Compositional disorder is shown to close the gap substantially with respect to the predictions of the virtual-crystal approximation. The bowing of the fundamental gap versus composition predicted by our calculations is in very good agreement with experiments available for the Zn(S,Se) pseudobinary alloy. At temperatures typical of molecular-beam epitaxy growth, the quaternary alloy displays a rather large amount of short-range order whose effect is to slightly but unmistakably open the gap. Our results agree well with recent experimental data for the quaternary alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)02044-6]

Substrate doping: A strategy for enhancing reactivity on gold nanocatalysts by tuning sp bands

We suggest that the reactivity of Au nanocatalysts can be greatly increased by doping the oxide substrate on which they are placed with an electron donor. To demonstrate this, we perform density functional theory calculations on a model system consisting of a 20-atom gold cluster placed on a MgO substrate doped with Al atoms. We show that not only does such substrate doping switch the morphology of the nanoparticles from the three-dimensional tetrahedral form to the two-dimensional planar form, but it also significantly lowers the barrier for oxygen dissociation by an amount proportional to the dopant concentration. At a doping level of 2.78%, the dissociation barrier is reduced by more than half, which corresponds to a speeding up of the oxygen dissociation rate by five orders of magnitude at room temperature. This arises from a lowering in energy of the s and p states of Au. The d states are also lowered in energy, however, this by itself would have tended to reduce reactivity. We propose that a suitable measure of the reactivity of Au nanoparticles is the difference in energy of sp and d states

Disproportionation Phenomena on Free and Strained Sn/Ge(111) and Sn/Si(111) Surfaces

Distortions of the $\sqrt3\times\sqrt3$ Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, $Q$, related to the surface band occupancy. A novel understanding of the $(3\times3)$-1U (``1 up, 2 down'') and 2U (``2 up, 1 down'') distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distorsions. Negative strain attracts pseudocharge from the valence band causing first a $(3\times3)$-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a $(\sqrt3\times\sqrt3)$-3U (``all up'') state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.Comment: Revtex, 5 pages, 3 figure

Ag-Cu catalysts for ethylene epoxidation: Selectivity and activity descriptors

Ag-Cu alloy catalysts for ethylene epoxidation have been shown to yield higher selectivity towards ethylene oxide compared to pure Ag, the unique catalyst employed in the industrial process. Previous studies showed that under oxidizing conditions Cu forms oxide layers on top of Ag. Using first-principles atomistic simulations based on density functional theory, we investigate the reaction mechanism on the thin oxide layer structures and establish the reasons for the improved selectivity. We extend the range of applicability of the selectivity descriptor proposed by Kokalj et al. [J. Catal. 254, 304 (2008)], based on binding energies of reactants, intermediates, and products, by refitting its parameters so as to include thin oxide layer catalysts. We show that the selectivity is mainly controlled by the relative strength of the metal-carbon vs. metal-oxygen bonds, while the height of the reaction barriers mostly depend on the binding energy of the common oxametallacycle intermediate. (C) 2013 AIP Publishing LLC

Compact atomic descriptors enable accurate predictions via linear models

We probe the accuracy of linear ridge regression employing a three-body local density representation derived from the atomic cluster expansion. We benchmark the accuracy of this framework in the prediction of formation energies and atomic forces in molecules and solids. We find that such a simple regression framework performs on par with state-of-the-art machine learning methods which are, in most cases, more complex and more computationally demanding. Subsequently, we look for ways to sparsify the descriptor and further improve the computational efficiency of the method. To this aim, we use both principal component analysis and least absolute shrinkage operator regression for energy fitting on six single-element datasets. Both methods highlight the possibility of constructing a descriptor that is four times smaller than the original with a similar or even improved accuracy. Furthermore, we find that the reduced descriptors share a sizable fraction of their features across the six independent datasets, hinting at the possibility of designing material-agnostic, optimally compressed, and accurate descriptors

Phonon softening and superconductivity in tellurium under pressure

The phonon dispersion and the electron-phonon interaction for the $\beta$-Po and the bcc high pressure phases of tellurium are computed with density-functional perturbation theory. Our calculations reproduce and explain the experimentally observed pressure dependence of the superconducting critical temperature (T$_{\rm c}$) and confirm the connection between the jump in T$_{\rm c}$ and the structural phase transition. The phonon contribution to the free energy is shown to be responsible for the difference in the structural transition pressure observed in low and room temperature experiments.Comment: Revtex, 4 Postscript figures, to appear in Phys. Rev. Let